Semiconductor device and method for manufacturing semiconductor device

A semiconductor device, comprising:

• a semiconductor-element substrate, wherein an electrode pattern is formed on one surface of an insulating substrate and a back-surface electrode is formed on the other surface of the insulating substrate;
• a stress-relaxation adhesive layer made of resin which covers at least a part of a portion of the surface of the insulating substrate where the electrode pattern and the back-surface electrode are not formed and a part of portion of a surface of the electrode pattern;
• a semiconductor element affixed, via a bonding material, to the surface of the electrode pattern opposite the insulating substrate;
• and
• a first sealing resin member which covers the semiconductor element and the semiconductor-element substrate,
• wherein a coefficient of linear thermal expansion of the first sealing resin member is closer to a coefficient of linear thermal expansion of the electrode pattern than a coefficient of linear thermal expansion of the insulating substrate, and a modulus of elasticity of the stress-relaxation adhesive layer is lower than a modulus of elasticity of the first sealing resin member.

A semiconductor device, comprising:

• a semiconductor-element substrate, wherein an electrode pattern is formed on one surface of an insulating substrate and a back-surface electrode is formed on the other surface of the insulating substrate;
• a semiconductor element affixed, via a bonding material, to the surface of the electrode pattern opposite the insulating substrate;
• a partition wall made of resin, whose height is higher than a height of the semiconductor element, and which is formed so as to enclose a periphery of a semiconductor-element substrate, and which is formed at a side of the semiconductor-element substrate where the semiconductor element is affixed;
• and
• a first sealing resin member which covers an inside of the partition wall, the semiconductor element and the semiconductor-element substrate,
• wherein a coefficient of linear thermal expansion of the first sealing resin member is closer to a coefficient of linear thermal expansion of the electrode pattern than a coefficient of linear thermal expansion of the insulating substrate, and a modulus of elasticity of the partition wall is lower than a modulus of elasticity of the first sealing resin member.