Semiconductor Arrangement

A method for producing a semiconductor arrangement, comprising:

• providing a semiconductor carrier of a second conduction type;
• epitaxially growing a first semiconductor zone of a first conduction type complementary to the second conduction type on the semiconductor carrier, wherein:
• the first semiconductor zone comprises a semiconductor base material doped with a first dopant and with a second dopant;
• the first dopant and the second dopant are made of different substances;
• the first dopant and the second dopant are made of substances which are both different from the semiconductor base material;
• the first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material;
• the first dopant causes a decrease or an increase of a lattice constant of the pure, undoped first semiconductor zone;
• the second dopant causes one or both of:
• a hardening of the first semiconductor zone;
• and
• an increase of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes a decrease, and, a decrease of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes an increase, respectively.