Group III-V and Group IV Composite Switch

Abstract

In one implementation, a group III-V and group IV composite switch includes a group IV transistor in a lower active die, the group IV transistor having a source and a gate situated on a bottom side of the lower active die. The group III-V and group IV composite switch also includes a group III-V transistor in an upper active die stacked over the lower active die, the group III-V transistor having a drain, a source, and a gate situated on a top side of the upper active die. The source of the group III-V transistor is electrically coupled to a drain of the group IV transistor using a through-semiconductor via (TSV) of the upper active die.

Dependencies are inferred from the claim text.