Semiconductor device and method of manufacturing the same
AssigneeFujitsu Limited
InventorTadahiro IMADA
Life of this patent
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Abstract
A semiconductor device includes a first semiconductor layer formed over a substrate; a second semiconductor layer formed over the first semiconductor layer; electrodes formed over the second semiconductor layer; and a third semiconductor layer formed on the second semiconductor layer; wherein the third semiconductor layer is formed so as to surround each element, in which the electrodes are formed, and wherein the third semiconductor layer is a semiconductor layer of a conductivity type whose polarity is opposite to that of carriers produced in the first semiconductor layer.
Claims20
A semiconductor device comprising:
- a first semiconductor layer formed over a substrate;
- a second semiconductor layer formed over the first semiconductor layer;
- electrodes formed over the second semiconductor layer;
- and
- a third semiconductor layer formed on the second semiconductor layer;
- wherein the third semiconductor layer is formed so as to surround each element, in which the electrodes are formed, and
- wherein the third semiconductor layer is a semiconductor layer of a conductivity type whose polarity is opposite to that of carriers produced in the first semiconductor layer.
A method of manufacturing a semiconductor device, the method comprising:
- sequentially layering films over a substrate, the films including formation materials for a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer;
- forming the third semiconductor layer by removing a portion of the film including the formation material for the third semiconductor layer;
- and
- forming electrodes over the second semiconductor layer;
- wherein the third semiconductor layer is formed so as to surround each element, in which the electrodes are formed, and
- wherein the third semiconductor layer is a semiconductor layer of a conductivity type whose polarity is opposite to that of carriers produced in the first semiconductor layer.
A method of manufacturing a semiconductor device, the method comprising:
- sequentially forming and layering a first semiconductor layer and a second semiconductor layer over a substrate;
- forming a mask on the second semiconductor layer, the mask including an opening at a predetermined region;
- forming a third semiconductor layer on a portion of the second semiconductor layer, the portion being exposed by the opening of the mask;
- removing the mask;
- and
- forming electrodes over the second semiconductor layer;
- wherein the third semiconductor layer is formed so as to surround each element, in which the electrodes are formed, and
- wherein the third semiconductor layer is a semiconductor layer of a conductivity type whose polarity is opposite to that of carriers produced in the first semiconductor layer.
Dependencies are inferred from the claim text.