Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric inkjet head

A field effect transistor comprising:

• an oxide conductor layer including a source region, a drain region, and a channel region;
• a gate electrode for controlling a conductive state of the channel region;
• and
• a gate insulating layer provided between the gate electrode and the channel region and made of a ferroelectric material or a paraelectric material;
• wherein
• the channel region is thinner than the source region and the drain region;
• and
• the oxide conductor layer, in which the channel region is thinner than the source region and the drain region, is formed in accordance with an imprinting technique.

A method of producing a field effect transistor including:

• an oxide conductor layer having a source region, a drain region, and a channel region;
• a gate electrode for controlling a conductive state of the channel region;
• and a gate insulating layer provided between the gate electrode and the channel region and made of a ferroelectric material or a paraelectric material;
• wherein
• the oxide conductor layer, in which the channel region is thinner than the source region and the drain region, is formed in accordance with an imprinting technique.