US 2013/0240852 A1 · Light-Emitting Device and Manufacturing Method Thereof

Abstract

Provided is a light-emitting device in which a voltage drop is suppressed and light extraction efficiency is increased. Provided is a light-emitting device with increased productivity. Provided is a light-emitting device with high reliability. An extremely thin conductive film from 3 nm to 50 nm is used as an electrode on a light-emitting side and an auxiliary wiring is provided in contact with the electrode. When the width of the auxiliary wiring is 100 μm or less, the auxiliary wiring is hardly perceived with the naked eye, so that a light-emitting device in which light extraction efficiency is increased and luminance is obtained uniformly. The extremely thin auxiliary wiring can be formed by nanoimprinting technology. With use of nanoimprinting technology, the width of the auxiliary wiring can be reduced to 10 nm or less.

Claims22

Dependent claims

A light-emitting device comprising:

a first electrode layer over an insulating surface;
a layer containing a light-emitting organic compound over the first electrode layer;
a second electrode layer over the layer;
and
a first auxiliary wiring over and in contact with the second electrode layer,
wherein the first electrode layer has a reflective property with respect to light emitted from the layer,
wherein the second electrode layer has a light-transmitting property with respect to light emitted from the layer, and
wherein a thickness of the second electrode layer is from 3 nm to 50 nm.

5 more elements

Dependencies are inferred from the claim text.

Light-Emitting Device and Manufacturing Method Thereof

Life of this patent

Light-Emitting Device and Manufacturing Method Thereof

Life of this patent

Abstract

Claims22