Semiconductor device and receiver
AssigneeFujitsu Limited
InventorTsuyoshi TAKAHASHI
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a p-type semiconductor layer, an n-type semiconductor layer, a pn junction portion at which the p-type semiconductor layer and the n-type semiconductor layer are joined to each other, and a multiple quantum barrier structure or a multiple quantum well structure that is provided in at least one of the p-type semiconductor layer and the n-type semiconductor layer and functions as a barrier against at least one of electrons and holes upon biasing in a forward direction. Upon biasing in a reverse direction, a portion that allows band-to-band tunneling of electrons is formed at the pn junction portion.
Claims20
A semiconductor device, comprising:
- a p-type semiconductor layer;
- an n-type semiconductor layer;
- a pn junction portion at which the p-type semiconductor layer and the n-type semiconductor layer are joined to each other;
- and
- a multiple quantum barrier structure or a multiple quantum well structure that is provided in at least one of the p-type semiconductor layer and the n-type semiconductor layer and functions as a barrier against at least one of electrons and holes upon biasing in a forward direction;
- wherein,
- upon biasing in a reverse direction, a portion that allows band-to-band tunneling of electrons is formed at the pn junction portion.
A receiver, comprising:
- an amplifier;
- and
- a detector connected to the amplifier;
- wherein
- the detector is a semiconductor device including:
- a p-type semiconductor layer;
- an n-type semiconductor layer;
- a pn junction portion at which the p-type semiconductor layer and the n-type semiconductor layer are joined to each other;
- and
- a multiple quantum barrier structure or a multiple quantum well structure that is provided in at least one of the p-type semiconductor layer and the n-type semiconductor layer and functions as a barrier against at least one of electrons and holes upon biasing in a forward direction;
- wherein,
- upon biasing in a reverse direction, a portion that allows band-to-band tunneling of electrons is formed at the pn junction portion.
A receiver, comprising:
- a mixer circuit;
- wherein
- the mixer circuit includes a semiconductor device including:
- a p-type semiconductor layer;
- an n-type semiconductor layer;
- a pn junction portion at which the p-type semiconductor layer and the n-type semiconductor layer are joined to each other;
- and
- a multiple quantum barrier structure or a multiple quantum well structure that is provided in at least one of the p-type semiconductor layer and the n-type semiconductor layer and functions as a barrier against at least one of electrons and holes upon biasing in a forward direction;
- wherein,
- upon biasing in a reverse direction, a portion that allows band-to-band tunneling of electrons is formed at the pn junction portion.
Dependencies are inferred from the claim text.