Nonvolatile memory device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorJunichi WADA
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Abstract
A nonvolatile memory device includes a first film layer formed on a substrate, and a second film layer formed on the first film layer. The second film layer comprises a first oxide material having a first oxygen content, and a second oxide material disposed laterally of the first oxide material and having a second oxygen content that is greater than the first oxygen content. The memory device also includes a third film layer formed on the second film layer, and the third film layer is disposed on the first oxide material and exposes portions of the second oxide material.
Claims20
A nonvolatile memory device, comprising:
- a first film layer formed on a substrate;
- a second film layer formed on the first film layer, the second film layer comprising:
- a first oxide material having a first oxygen content;
- and
- a second oxide material disposed laterally of the first oxide material and having a second oxygen content that is greater than the first oxygen content;
- and
- a third film layer formed on the second film layer, the third film layer disposed on the first oxide material and exposing portions of the second oxide material.
A nonvolatile memory device, comprising:
- a plurality of memory cells, each of the plurality of memory cells comprising:
- a first electrode;
- a variable resistance layer disposed on the first electrode, the variable resistance layer comprising a first oxide material having a first oxygen content;
- and
- an insulative region disposed adjacent the variable resistance layer, wherein the insulative region comprises a second oxide material having a second oxygen content that is greater than the first oxygen content;
- and
- a second electrode disposed on the variable resistance layer.
A method for manufacturing a nonvolatile memory device, the method comprising:
- forming a first film layer on a substrate;
- forming a second film layer on the first film layer, the second film layer comprising:
- a first oxide material having a first oxygen content;
- and
- a second oxide material disposed laterally of the first oxide material and having a second oxygen content that is greater than the first oxygen content;
- and
- forming a third film layer on the second film layer, the third film layer disposed on the first oxide material and exposing portions of the second oxide material.
Dependencies are inferred from the claim text.