Memory component, memory device, and method of operating memory device

A memory component comprising:

• a first electrode;
• a second electrode;
• and
• a memory layer between the first and second electrodes, wherein,
• the memory layer includes (a) a first memory layer containing aluminum (Al) and a chalcogen element of tellurium (Te), and (b) a second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide, and
• the second memory layer has a configuration in which a first layer made of at least one of the transition metal oxide and the transition metal oxynitride and a second layer containing the aluminum oxide as its main component are layered in that order proceeding from a side facing the first electrode.