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US 2013/0240787 A1Published application
Semiconductor nanocrystals
AssigneeMassachusetts Institute of Technology
InventorsOu Chen, Moungi G. Bawendi
Life of this patent
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Abstract
A method of making a nanocrystal includes slowly infusing a M-containing compound and a X donor into a mixture including a nanocrystal core, thereby forming an overcoating including M and X on the core.
Claims24
A method of making a nanocrystal comprising:
- slowly infusing a M-containing compound and a X donor into a mixture including a nanocrystal core, thereby forming an overcoating including M and X on the core.
A population of semiconductor nanocrystals, each member of the population comprising:
- a core including a first semiconductor material and an overcoating including a second semiconductor material on a surface of the core;
- wherein the population has any one or more of the following properties:
- (a) the population has an average diameter of no greater than 10 nm and exhibits less than a 5% rms deviation in diameter;
- (b) the population photoluminesces with a quantum yield of at least 90% at room temperature;
- (c) the population emits light in a spectral range of no greater than about 25 nm full width at half max (FWHM);
- or
- (d) the population has an average blinking on-time fraction of 80% or greater.
4 more elements
Dependencies are inferred from the claim text.