Neutron detection chip assembly
AssigneeTrusted Semiconductor Solutions, Inc.
InventorsAllan Thomas Hurst, JR., Danny R. Kagey, Harold Diederich
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Abstract
A neutron detector and method of manufacture are provided. The neutron detector includes a sensing element structure having a substrate with a front surface and a back surface, opposite to the front surface. A semiconductor sensing element is fabricated in an active semiconductor layer on the front surface of the first substrate and is sensitive to a charged particle. A neutron conversion structure is attached to the back surface and includes neutron conversion material that emits the charged particle in response to a reaction with neutrons.
Claims29
A neutron detector device comprising:
- a sensing element structure comprising:
- a first substrate with a front surface and a back surface, opposite to the front surface;
- and
- a semiconductor sensing element, which is sensitive to a charged particle and is fabricated in an active semiconductor layer on the front surface of the first substrate;
- and
- a neutron conversion structure attached to the back surface and comprising neutron conversion material that emits the charged particle in response to a reaction with neutrons.
A method of manufacturing a neutron detector device, comprising:
- fabricating a sensing element structure comprising:
- a first substrate with a front surface and a back surface, opposite to the front surface;
- and
- an active semiconductor layer on the front surface of the first substrate, which comprises a semiconductor sensing element that is sensitive to a charged particle;
- and
- fabricating a neutron conversion structure separately from the sensing element structure, the neutron conversion structure comprising neutron conversion material that emits the charged particle in response to a reaction with neutrons;
- and
- attaching the neutron conversion structure to the back surface of the first substrate.
A neutron detector comprising:
- a sensing element structure comprising a substrate, a semiconductor sensing element that is fabricated on a front surface of the substrate and is sensitive to a charged particle, and a back surface opposite to the first surface;
- a neutron conversion structure attached to the back surface, which is configured to generate the charged particle in response to a reaction with a neutron;
- and
- a recess formed in the back surface, between the neutron conversion structure and the semiconductor sensing element.
Dependencies are inferred from the claim text.