US 2013/0240352 A1Published application

Sputtering Target

AssigneeMitsui Mining & Smelting Co., Ltd.

InventorMakoto Ikeda

Life of this patent

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Abstract

Provided is a sputtering target characterized by containing Ag and C. The sputtering target contains Ag in addition to Fe, Pt and C. By allowing the sputtering target to contain Ag, the sputtering target has high density. As a result, when the sputtering target is placed in a vacuum atmosphere in the sputtering process, the amount of a gas emitted from the sputtering target can be reduced, and the properties of a thin film formed by sputtering can be improved. Moreover, even when the sputtering target is produced by low-temperature sintering, it has high density.

Claims8

Dependent claims

A sputtering target containing Fe, Pt, Ag and C.

Dependencies are inferred from the claim text.

Facts

Application: 13/989,251Filed 28 Nov 2011
Priority: JP 2010-26503729 Nov 2010
Published: 19 Sep 2013
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

G11B 5/851
Processes or apparatus specially adapted for manufacturing record carriers: coating a support with a magnetic layer by sputtering
C22C 33/0278
Characterised by the range of the alloying elements: with at least one alloying element having a minimum content above 5%
C23C 14/3414
Cathode assembly for sputtering apparatus, e.g. Target: metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
B22F 2998/10
Supplementary information concerning processes or compositions relating to powder metallurgy: processes characterised by the sequence of their steps

Family

US 9,011,653 B2Related patent
US 2013/0240352 A1This patent

From the US filing history. Foreign family members aren’t listed.

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