High Efficiency Broadband Semiconductor Nanowire Devices

A device comprising:

• a substrate having at least one semiconductor structure of a plurality of semiconductor structures formed thereupon, the at least one semiconductor structure comprising at least one quantum structure of a plurality of quantum structures, each quantum structure disposed within a predetermined portion of the at least one semiconductor structure of the plurality of semiconductor structures and formed by a self-organization of the at least one semiconductor structure of the plurality of semiconductor structures during its growth;
• and
• the at least one semiconductor structure of the plurality of semiconductor structures having formed on its surface at least one nanostructure of a plurality of nanostructures.

A method of generating a gas comprising:

• providing a device comprising at least a substrate having at least one semiconductor structure of a plurality of semiconductor structures formed thereupon, the at least one semiconductor structure comprising a first predetermined portion formed from a wurtzite semiconductor whose growth was initiated by providing nanoscale droplets of a group III element constituent of the wurtzite semiconductor on the surface of the substrate and absent both a foreign catalyst and other constituent elements of the wurtzite semiconductor;
• and
• illuminating the device with optical radiation within a predetermined wavelength range to generate the gas via a photoelectrochemical process.