Method for manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorToshiyuki MORITA
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Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes forming a first copper film in a first recess and a second recess having a width narrower than the first recess formed in an insulating layer above a substrate while the substrate is heated to a reflow temperature at which copper flows. The method includes forming a second copper film having an impurity concentration higher than the first copper film above the first copper film with lower flowability than the forming the first copper film.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a first copper film in a first recess and a second recess having a width narrower than the first recess formed in an insulating layer above a substrate while the substrate is heated to a reflow temperature at which copper flows;
- and
- forming a second copper film having an impurity concentration higher than the first copper film above the first copper film with lower flowability than the forming the first copper film.
A method for manufacturing a semiconductor device, comprising:
- forming a first copper film in a first recess and a second recess having a width narrower than the first recess formed in an insulating layer above a substrate while the substrate is heated to a reflow temperature at which copper flows;
- and
- forming a second copper film having an impurity concentration higher than the first copper film above the first copper film, the first copper film and the second copper film being successively formed in a same process chamber by a sputtering process.
Dependencies are inferred from the claim text.