Method and Apparatus for Plasma Dicing a Semi-conductor Wafer

A method for plasma dicing a substrate, the method comprising:

• providing a process chamber having a wall;
• providing a plasma source adjacent to the wall of the process chamber;
• providing a work piece support within the process chamber, the work piece support having a monopolar electrostatic chuck;
• placing the substrate onto a support film on a frame to form a work piece;
• loading the work piece onto the monopolar electrostatic chuck;
• generating a plasma through the plasma source;
• and
• etching the work piece through the generated plasma.

A method for plasma dicing a substrate, the method comprising:

• providing a process chamber having a wall;
• providing a plasma source adjacent to the wall of the process chamber;
• placing the substrate onto a support film on a frame to form a work piece, the substrate having a substrate diameter;
• providing a work piece support within the process chamber, the work piece support having an electrostatic chuck, the electrostatic chuck having an electrostatic chuck diameter, the electrostatic chuck diameter being greater than the substrate diameter;
• loading the work piece onto the electrostatic chuck;
• generating a plasma through the plasma source;
• and
• etching the work piece through the generated plasma.

An apparatus for plasma dicing a substrate comprising:

• a process chamber having a wall;
• a plasma source adjacent to the wall of the process chamber;
• a work piece support within the process chamber, the work piece support having a monopolar electrostatic chuck;
• and
• a work piece having the substrate on a support film on a frame, the work piece being placed onto the monopolar electrostatic chuck.

An apparatus for plasma dicing a substrate comprising:

• a process chamber having a wall;
• a plasma source adjacent to the wall of the process chamber;
• a work piece support within the process chamber, the work piece support having an electrostatic chuck, the electrostatic chuck having an electrostatic chuck diameter, the electrostatic chuck diameter being greater than a substrate diameter;
• and
• a work piece having the substrate on a support film on a frame, the work piece being placed onto the electrostatic chuck.