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US 2013/0230952 A1Published application
Integrated circuit device and method of manufacturing same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPai-Chieh WANG, Yimin HUANG
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Abstract
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved protection for the bottom portion of the gate structure. In some embodiments, the method achieves improved protection for gate structure bottom by forming a recess on either side of the gate structure and placing spacers on the side walls of the gate structure, so that the spacers protect the portion of the gate structure below the gate dielectric layer.
Claims20
A method comprising:
- providing a semiconductor substrate;
- forming a gate structure over the substrate;
- forming recesses on both sides of the gate structure;
- performing an implantation process with a dopant on the substrate, thereby forming a lightly doped source and drain (LDD) region in the substrate, the LDD region being interposed by the gate structure;
- forming spacers for the gate structure;
- and
- forming source and drain features on each side of the gate structure.
4 more elements
A method comprising:
- providing a semiconductor substrate having a first region and a second region;
- forming first and second gate structures over the substrate in the first and second regions, respectively;
- forming a dielectric layer over the substrate, including over the second gate structure;
- forming a doped region in the substrate in the second region at either side of the second gate structure;
- forming a first recess in the substrate at both sides of the first gate structure;
- forming first lightly doped source and drain (LDD) regions in the semiconductor substrate in the first recess;
- forming LDD regions in the semiconductor substrate in the second region;
- forming spacers for the first and second gate structures;
- forming a second recess in the substrate at both sides of the first gate structure;
- epitaxially (epi) growing a semiconductor material to fill the second recess.
7 more elements
A method comprising:
- providing a semiconductor substrate having a first region and a second region;
- forming first and second gate structures over the substrate in the first and second regions, respectively;
- forming a first recess on both sides of each of the first and second gate structures;
- forming first and second lightly doped source and drain (LDD) regions in the first recess in the first and second regions, respectively;
- forming offset spacers on sidewalls of the first and second gate structures;
- forming a second recess in the substrate at both sides of the first gate structure;
- epitaxially (epi) growing a first semiconductor material to fill the second recess;
- forming main spacers for the first and second gate structures;
- forming a third recess in the substrate at both sides of the second gate structure;
- and
- epitaxially (epi) growing a second semiconductor material to fill the third recess, the second semiconductor material being different than the first semiconductor material.
8 more elements
Dependencies are inferred from the claim text.