US 2013/0230809 A1 · RESIST UNDERLAYER FILM FORMING COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING THE SAME

Abstract

There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond.

Claims16

Dependent claims

A resist underlayer film forming composition for lithography comprising:

a polymer;
and
a solvent, wherein
in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond, and
the polymer includes repeating structural units of Formula (1a) and Formula (1b):
(where each of R1, R2, R3, and R4 is independently a hydrogen atom, an C1-13 alkyl group, a hydroxyl group, a methoxy group, a thiol group, an acetyl group, a nitro group, an allyl group, a phenyl group, or a naphthyl group;
each of A1, A2, A3, A4, A5, and A6 is independently a hydrogen atom, a methyl group, or an ethyl group;
and Q is a divalent organic group between two carbon atoms)
as the main chain.

6 more elements

Dependencies are inferred from the claim text.

Resist underlayer film forming composition, and method for forming resist pattern using the same

Life of this patent

Resist underlayer film forming composition, and method for forming resist pattern using the same

Life of this patent

Abstract

Claims16