Semiconductor module and method of manufacturing a semiconductor module
AssigneeABB Research Ltd.
InventorsNicola SCHULZ, Samuel HARTMANN
Life of this patent
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Abstract
An exemplary semiconductor module includes a substrate formed of a ceramic insulator, and at least one metallic layer formed on the substrate. The metallic layer includes a deepening for placing and fixing a contact element. The contact element is at least partially “L”-shaped and includes a first arm for fixing the contact element at the deepening, and a second arm for interconnecting the contact element with an external device. The deepening has a horizontal dimension which is about ≦0.5 mm bigger than the horizontal dimension of the contact element.
Claims13
A semiconductor module, comprising:
- a substrate formed of a ceramic insulator;
- at least one metallic layer formed on the substrate;
- and
- a contact element, the contact element being at least partially “L”-shaped and including a first arm for fixing the contact element at the deepening, and a second arm for interconnecting the contact element with an external device;
- wherein the at least one metallic layer includes a deepening portion for placing and fixing the contact element, wherein the deepening portion has a horizontal dimension which is about ≦0.5 mm bigger than a horizontal dimension of the contact element.
A method of manufacturing a semiconductor module, comprising:
- bringing into contact a contact element and a metallic layer, the contact element being at least partially “L”-shaped and including a first arm for fixing the contact element at a deepening, and a second arm for interconnecting the contact element, wherein the metallic layer includes a deepening portion for placing the contact element, wherein the deepening has a horizontal dimension which is about ≦0.5 mm bigger than the horizontal dimension of the contact element;
- pressing the contact element onto the metallic layer at the deepening;
- and
- applying ultrasonic energy to the interface of the contact element and the metallic layer for welding the contact element onto the metallic layer.
A semiconductor module, comprising:
- a substrate formed of a ceramic insulator;
- at least one metallic layer formed on the substrate;
- and
- a contact element having a first arm that extends in a first direction and second arm connected to the first arm that extends in a second direction, wherein the at least one metallic layer includes a depression configured to receive the first arm of the contact element, the depression having a horizontal dimension which is about ≦0.5 mm bigger than a horizontal dimension of the contact element.
Dependencies are inferred from the claim text.