Backside illuminated image-sensor and method for manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorOh Jin JUNG
Life of this patent
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Abstract
A method for manufacturing a backside-illuminated image sensor may include forming an insulating layer having a predetermined depth in an inactive region of a front side of a semiconductor substrate and forming a photodetector in an active region of a front side of the semiconductor substrate having the insulating layer. Further, the method may include stacking a support substrate on and/or over the front side of the semiconductor substrate having the photodetector. Furthermore, the method may include performing back grinding on the rear side of the semiconductor substrate by using the insulating layer as the stop point.
Claims11
A method comprising:
- forming an insulating layer having a predetermined depth in an inactive region of a front side of a semiconductor substrate;
- forming a photodetector in the active region of the front side of the semiconductor substrate;
- stacking a support substrate on the front side of the semiconductor substrate having the photodetector;
- and
- performing back grinding on the rear side of the semiconductor substrate by using the insulating layer as the stop point to expose a portion of the insulating layer on the rear side of the semiconductor substrate.
An apparatus comprising:
- a photodetector formed in an active region of a semiconductor substrate on a front side of the semiconductor substrate;
- an insulating layer formed to have a predetermined depth in an inactive region of the semiconductor substrate, wherein the insulating layer is exposed at a rear side of the semiconductor substrate;
- and
- a support substrate supporting the semiconductor substrate.
Dependencies are inferred from the claim text.