Reduced light degradation due to low power deposition of buffer layer
AssigneeInternational Business Machines Corporation
InventorsKeith E. Fogel, Augustin J. Hong, Jeehwan Kim, Devendra K. Sadana
Life of this patent
Estimating the term…
Abstract
Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a work function that falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation. An intrinsic layer and an n-type layer are formed over the p-type layer.
Claims25
A method for forming a photovoltaic device, comprising:
- forming a buffer layer between a transparent electrode and a p-type layer, the buffer layer including a work function that falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation;
- and
- forming an intrinsic layer and an n-type layer over the p-type layer.
A method for forming a photovoltaic device, comprising:
- forming a transparent electrode on a transparent substrate;
- depositing a buffer layer on the transparent electrode, the buffer layer being deposited at a deposition power to provide an amorphous germanium layer with a work function that falls substantially in a middle of a barrier formed between adjacent layers to the buffer layer to provide a greater resistance to light induced degradation;
- depositing a p-type layer on the buffer layer;
- forming an intrinsic layer on the p-type layer;
- and
- forming an n-type layer on the intrinsic layer.
A method for forming a photovoltaic device, comprising:
- forming a transparent conductive oxide on a transparent substrate;
- depositing a buffer layer including germanium on the transparent conductive oxide, the buffer layer being deposited at a deposition power of less than about 0.05 Watts per square centimeter to adjust a work function of the buffer layer;
- depositing a p-type amorphous silicon carbide layer on the buffer layer such that the work function of the buffer layer falls substantially in a middle of a barrier between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation;
- forming an amorphous silicon intrinsic layer on the p-type layer;
- forming an amorphous silicon n-type layer on the intrinsic layer;
- and
- forming a back reflector on the n-type layer.
A photovoltaic device, comprising:
- a transparent conductive oxide formed on a transparent substrate;
- a buffer layer including germanium formed on the transparent conductive oxide;
- a p-type layer formed on the buffer layer such that the work function of buffer layer falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation;
- an intrinsic layer formed on the p-type layer;
- an n-type layer formed on the intrinsic layer;
- and
- a back reflector formed on the n-type layer.
Dependencies are inferred from the claim text.