Variable resistive memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsKi-hyung NAM, Yong-kwan KIM, Ho-joong LEE, Pulunsol CHO
Life of this patent
Estimating the term…
Abstract
A variable resistive memory device capable of reducing contact resistance by including a contact layer having low contact resistance, the variable resistive memory device including a substrate comprising an active region; a gate line on the substrate; a first contact layer electrically connected to the active region; a memory cell contact plug electrically connected to the first contact layer; and a variable resistive memory cell electrically connected to the memory cell contact plug, wherein the first contact layer has less contact resistance with respect to the active region than the memory cell contact plug.
Claims18
A variable resistive memory device comprising:
- a substrate including an active region;
- a gate line on the substrate;
- a first contact layer electrically connected to the active region;
- a memory cell contact plug electrically connected to the first contact layer;
- and
- a variable resistive memory cell electrically connected to the memory cell contact plug,
- wherein the first contact layer has less contact resistance with respect to the active region than the memory cell contact plug.
A variable resistive memory device comprising:
- a substrate;
- a contact plug on the substrate;
- and
- a contact layer between the substrate and the contact plug and having less contact resistance with respect to the substrate than the contact plug.
A variable resistive memory device comprising:
- a substrate;
- a memory cell contact plug;
- a variable resistive memory cell electrically connected to the memory cell contact plug;
- and
- a contact layer electrically connected to the memory cell contact plug, the contact layer having a lower contact resistance with respect to the substrate than the memory cell contact plug.
Dependencies are inferred from the claim text.