Substrate drying apparatus, substrate drying method and control program
AssigneeEbara Corporation
InventorsTomoatsu ISHIBASHI, Takahiro OGAWA, Kenichi SUGITA, Shinji KAJITA, Koichi FUKAYA, Akira NAKAMURA
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AssigneeEbara Corporation
InventorsTomoatsu ISHIBASHI, Takahiro OGAWA, Kenichi SUGITA, Shinji KAJITA, Koichi FUKAYA, Akira NAKAMURA
Estimating the term…
A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv′, the projected discharge position Gfv′ being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle α formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle θ/2 to an angle determined by deducting the half contact angle θ/2 from 90°, the half contact angle θ/2 being a half of the contact angle θ.
1-5. (canceled)
A substrate drying method of supplying a substrate rotating in a horizontal plane with a rinse agent flow and a drying gas flow while the rinse agent flow and the drying gas flow are moved from the center side toward an outer periphery side of the rotating substrate, the drying gas flow being able to contain IPA, comprising the steps of:
A substrate drying method of supplying a substrate rotating in a horizontal plane with a rinse agent flow and a drying gas flow while the rinse agent flow and the drying gas flow are moved from the center side toward an outer periphery side of the rotating substrate, the drying gas flow being able to contain IPA, comprising the steps of:
Dependencies are inferred from the claim text.