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US 2013/0199824 A1Published application
Microelectronics device including anisotropic conductive layer and method of forming the same
OwnerJin-Suk LEEinventor
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Abstract
A microelectronics device includes a first substrate, first electrodes disposed on the first substrate, an insulating layer covering the first electrodes, the insulating layer including openings on the first electrodes, and an anisotropic conductive film on the insulating layer, the anisotropic conductive film including conductive particles electrically connected to the first electrodes through the openings.
Claims20
A microelectronics device, comprising:
- a first substrate;
- first electrodes disposed on the first substrate;
- an insulating layer covering the first electrodes, the insulating layer including openings on the first electrodes;
- and
- an anisotropic conductive film on the insulating layer, the anisotropic conductive film including conductive particles electrically connected to the first electrodes through the openings.
2 more elements
A method of forming a microelectronics device, the method comprising:
- forming first electrodes on a first substrate;
- forming an insulating layer covering the first electrodes;
- providing an anisotropic conductive film on the insulating layer, the anisotropic conductive film including conductive particles dispersed in a matrix;
- forming second electrodes on a second substrate;
- arranging the second substrate with the second electrodes on the anisotropic conductive film, such that the first electrodes and the second electrodes overlap each other;
- and
- compressing the first substrate and the second substrate, such that the first and second electrodes compress against each other with the anisotropic conductive film therebetween.
4 more elements
Dependencies are inferred from the claim text.