Gas injectors for chemical vapour deposition (cvd) systems and cvd systems with the same

An apparatus for epitaxial deposition of a monocrystalline Group III-V semiconductor material, comprising:

• a reaction chamber which receives gas streams of a gaseous Group III precursor of gallium trichloride as one reactant and a gaseous Group V component as another reactant;
• one of more substrates(s) positioned in the reaction chamber to receive a deposit of semiconductor material from reaction of the Group III precursor and Group V component;
• a heating chamber external of the reaction chamber for heating the gaseous Group III precursor to a temperature sufficient to decompose dimers therein as well as to prevent dimer formation of the precursor prior to contacting the one or more substrate(s);
• and
• means operatively associated with the heating and reaction chambers for passing the Group III precursor through a funnel or wedge shaped channel that increases in cross-section in the direction of gas flow in order to provide an expanded laminar stream of heated Group III precursor gas along a wall of the reaction chamber to the one or more substrate(s), with the stream being sufficiently expanded to flow above each of the one or more substrate(s) to thereby deposit the semiconductor material on the substrate(s).