US 2013/0171780 A1 · BODY CONTACTED HYBRID SURFACE SEMICONDUCTOR-ON-INSULATOR DEVICES

Abstract

A portion of a top semiconductor layer of a semiconductor-on-insulator (SOI) substrate is patterned into a semiconductor fin having substantially vertical sidewalls. A portion of a body region of the semiconductor fin is exposed on a top surface of the semiconductor fin between two source regions having a doping of a conductivity type opposite to the body region of the semiconductor fin. A metal semiconductor alloy portion is formed directly on the two source regions and the top surface of the exposed body region between the two source regions. The doping concentration of the exposed top portion of the body region may be increased by ion implantation to provide a low-resistance contact to the body region, or a recombination region having a high-density of crystalline defects may be formed. A hybrid surface semiconductor-on-insulator (HSSOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) thus formed has a body region that is electrically tied to the source region.

Claims21

Dependent claims

A method of forming a semiconductor structure comprising:

forming a semiconductor fin having a first sidewall, a second sidewall, and a substantially horizontal top surface and located directly on an insulator layer and having a doping of a first conductivity type, wherein said first and second sidewalls are substantially parallel to each other and substantially vertical;
forming a recombination-center-containing semiconductor region directly underneath said substantially horizontal top surface and including a semiconductor material and having a doping of said first conductivity type;
and
forming a metal semiconductor alloy portion directly on said recombination-center-containing semiconductor region and at least one source region formed within said semiconductor fin and having a doping of a second conductivity type, wherein said second conductivity type is the opposite of said first conductivity type.

1 more element

Dependencies are inferred from the claim text.

Body contacted hybrid surface semiconductor-on-insulator devices

Life of this patent

Body contacted hybrid surface semiconductor-on-insulator devices

Life of this patent

Abstract

Claims21