Method for producing thick film photoresist pattern
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsYasushi Washio, Tomoyuki Ando, Eiichi Shimura, Toshiaki Tachi
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Abstract
A method for producing a thick film photoresist pattern including laminating a thick photoresist layer including a chemically amplified positive-type photoresist composition for thick film on a support; irradiating the thick photoresist layer; and developing the thick photoresist layer to obtain a thick film resist pattern; in which the composition includes an acid generator, a resin whose alkali solubility increases by the action of an acid, and an organic solvent having a boiling point of at least 150° C. and a contact angle on a silicon substrate of no greater than 18°, in an amount of at least 40% by mass with respect to total mass of the organic solvent.
Claims4
A method for producing a thick film photoresist pattern, comprising:
- laminating a thick photoresist layer comprising a chemically amplified positive-type photoresist composition for thick film on a support;
- irradiating the thick photoresist layer with an active ray or radiation;
- and
- developing the thick photoresist layer following the irradiating to obtain a thick film resist pattern;
- wherein:
- the chemically amplified positive-type photoresist composition for thick film comprises an acid generator (A) capable of producing an acid upon irradiation with the active ray or radiation, a resin (B) whose alkali solubility increases by the action of an acid, and an organic solvent (S);
- and
- the organic solvent (S) comprises an organic solvent having a boiling point of no less than 150° C. at ordinary pressure and a contact angle on a silicon substrate of no greater than 18°, in an amount of no less than 40% by mass with respect to total mass of the organic solvent.
Dependencies are inferred from the claim text.