Vapor treatment process for pattern smoothing and inline critical dimension slimming
AssigneeTokyo Electron Limited
InventorsShannon W. DUNN, Dave HETZER
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Abstract
A method for patterning a substrate is described. The method includes forming a layer of radiation-sensitive material on a substrate, and preparing a pattern in the layer of radiation-sensitive material using a lithographic process, wherein the pattern is characterized by a critical dimension (CD) and a roughness. Following the preparation of the pattern in the layer of radiation-sensitive material, the method further includes performing a CD slimming process to reduce the CD to a reduced CD, and performing a vapor smoothing process to reduce the roughness to a reduced roughness.
Claims20
A method for patterning a substrate, comprising:
- forming a layer of radiation-sensitive material on a substrate;
- preparing a pattern in said layer of radiation-sensitive material using a lithographic process, said pattern being characterized by a critical dimension (CD) and a roughness;
- following said preparing said pattern, performing a CD slimming process to reduce said CD to a reduced CD;
- and
- following said preparing said pattern, performing a vapor smoothing process to reduce said roughness to a reduced roughness.
Dependencies are inferred from the claim text.