High Throughput Processing Using Metal Organic Chemical Vapor Deposition

A metal-organic chemical vapor deposition (MOCVD) system comprising

• a chamber, a substrate support system, and a gas emission system;
• wherein the substrate support system comprises a plurality of substrate support planets operable to support one or more substrates, wherein the substrate support planets are disposed in a plane and are equidistant from a central axis of the substrate support system, wherein the central axis is perpendicular to the plane;
• wherein the gas-emission system comprises a gas-emitting fixture disposed at the central axis of the substrate support system, wherein the gas-emission system is operable to radially emit a plurality of gases from the gas-emitting fixture at substantially equal total flow rates across the substrate support planets;
• wherein the substrate support system and the gas emission system are contained within the chamber;
• wherein the gas emission system is operable to provide a plurality of isolated environments suitable for depositing uniform layers on the substrates;
• and
• wherein the system is operable to independently vary one or more process parameters in each isolated environment.