Semiconductor memory device and method of fabrication and operation
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Min Hong, Tae-Kyung Kim, Woosung Choi
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Abstract
A non-volatile semiconductor memory device comprises a semiconductor substrate and a plurality of gate structures formed on a cell region of the semiconductor substrate. The plurality of gate structures include: a first select-gate structure and a second select-gate structure disposed on the cell region, the first select-gate structure and the second select-gate structure spaced apart from each other, and a plurality of cell gate structures disposed between the first select-gate structure and the second select-gate structure. At least one of the select-gate structures comprises plural select gates.
Claims24
A non-volatile semiconductor memory device, comprising:
- a semiconductor substrate;
- and
- a plurality of gate structures formed on a cell region of the semiconductor substrate;
- wherein the plurality of gate structures include:
- a first select-gate structure disposed on the cell region;
- a second select-gate structure disposed on the cell region, wherein at least one of the select-gate structures comprises plural select gates, and wherein the first select-gate structure and the second select-gate structure are spaced apart from each other;
- and
- a plurality of cell gate structures disposed between the first select-gate structure and the second select-gate structure.
A non-volatile semiconductor memory device, comprising:
- plural adjacent select gates disposed on a semiconductor substrate, wherein the adjacent select gates are serially connected;
- a select-gate structure disposed on the semiconductor substrate, wherein the select-gate structure is spaced apart from the plural adjacent select gates;
- and
- plural cell gate structures disposed between the select-gate structure and the plural adjacent select gates.
A method for fabricating a non-volatile semiconductor memory device, the method comprising:
- forming a first select-gate structure on a cell region of a substrate;
- forming a second select-gate structure on the cell region of the substrate, wherein the first select-gate structure and the second select-gate structure are spaced apart from each other, and wherein at least one of the select-gate structures comprises plural select gates;
- and
- forming a plurality cell gate structures between the first select-gate structure and the second select-gate structure, on the cell region of the substrate.
Dependencies are inferred from the claim text.