Arrays Of Vertically Stacked Tiers Of Non-Volatile Cross Point Memory Cells, Methods Of Forming Arrays Of Vertically Stacked Tiers Of Non-Volatile Cross Point Memory Cells, And Methods Of Reading A Data Value Stored By An Array Of Vertically Stacked Tiers Of Non-Volatile Cross Point Memory Cells

An array of vertically stacked tiers of non-volatile cross point memory cells, comprising:

• a plurality of horizontally oriented word lines within individual tiers of memory cells;
• a plurality of horizontally oriented global bit lines having local vertical bit line extensions extending through multiple of the tiers of memory cells;
• and
• individual of the memory cells comprising multi-resistive state material received between one of the horizontal word lines and one of the local vertical bit line extensions where such cross, with such ones of the horizontal word lines and local vertical bit line extensions comprising opposing conductive electrodes of individual memory cells where such cross, the multi-resistive state material comprising a C-shape in a vertical cross section.

An array of vertically stacked tiers of non-volatile cross point memory cells, comprising:

• a plurality of horizontally oriented word lines within individual tiers of memory cells;
• a plurality of horizontally oriented global bit lines having local vertical bit line extensions extending through multiple of the tiers of memory cells;
• and
• individual of the memory cells comprising multi-resistive state material received between one of the horizontal word lines and one of the local vertical bit line extensions where such cross, with such ones of the horizontal word lines and local vertical bit line extensions comprising opposing conductive electrodes of individual memory cells where such cross, the multi-resistive state material comprising a composite of two different composition materials, one of the two materials of the composite comprising a plurality of spaced blocks received along individual of the local vertical bit line extensions with individual of the spaced blocks being associated with individual of the memory cells, the other of the two materials of the composite being of C-shape in a horizontal cross section and extending continuously along individual of the local vertical bit line extensions through multiple of the tiers.