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US 2013/0159796 A1Published application
Read bias management to reduce read errors for phase change memory
AssigneeMicron Technology, Inc.
InventorFerdinando Bedeschi
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Abstract
Subject matter disclosed herein relates to a memory device, and more particularly to read performance of phase change memory.
Claims20
A method comprising:
- applying a bias condition to read contents of a memory device;
- counting read errors in said read contents of said memory device;
- and
- modifying said bias condition in response to said count of errors exceeding a threshold number.
1 more element
An apparatus comprising:
- a controller to:
- apply a bias condition to read contents of a memory device;
- count read errors in said read contents of said memory device;
- and
- modify said bias condition in response to said count of read errors exceeding a threshold number.
2 more elements
A system comprising:
- a memory device comprising a phase change memory (PCM) array, said memory device further comprising a memory controller to:
- apply a bias condition to read contents of said memory device;
- count read errors in said read contents of said memory device;
- and
- modify said bias condition in response to said count of read errors exceeding a threshold number;
- and
- a processor to host one or more applications and to initiate reading said contents of said PCM array.
4 more elements
The system of claim. 18, said controller to:
- iteratively modify said bias condition until said number of said read errors comprises a number less than or equal to said threshold number.
Dependencies are inferred from the claim text.