Data storage device generating redundancy for data path protection of a parity sector

A method of operating a data storage device comprising a non-volatile memory comprising a plurality of memory segments, the method comprising:

• receiving a write command comprising a first logical block address (LBA) and first user data, and a second LBA and second user data;
• mapping the first LBA to a first physical block address (PBA) for addressing a first memory segment;
• mapping the second LBA to a second PBA for addressing a second memory segment;
• generating first redundancy in response to the first user data;
• generating second redundancy in response to the second user data;
• generating parity data in response to the first and second user data;
• generating third redundancy in response to:
• at least one of the first LBA and the first PBA;
• and
• at least one of the second LBA and the second PBA;
• and
• writing the first and second user data and parity data to the non-volatile memory and write the first, second, and third redundancy to the non-volatile memory.