Memory storage device and memory controller and data writing method thereof

A data writing method, for a memory storage device, wherein the memory storage device comprises a second temporary memory, a memory controller and a rewritable non-volatile memory module, a first temporary memory is disposed in the memory controller and a transmission bandwidth the first temporary memory is larger than a transmission bandwidth of the second temporary memory, the data writing method comprises:

• receiving at least one write command and at least one write data corresponding to the at least one write command from the host system;
• storing the at least one write data into a temporary write data storage area in the first temporary memory temporarily;
• writing the at least one write data corresponding to the at least one write command into the rewritable non-volatile memory module from the temporary write data storage area;
• copying the at least one write data into the second temporary memory from the temporary write data storage area;
• determining whether a program fail is occurred after writing the at least one write data into the rewritable non-volatile memory module;
• and
• reading the at least one write data from the second temporary memory and writing the at least one write data into the rewritable non-volatile memory module according to the at least one write command when the program failed is occurred.

A memory controller, controlling a rewritable non-volatile memory module, wherein the memory controller comprising

• a host interface, coupled to a host system;
• a memory interface, coupled to the rewritable non-volatile memory module;
• a memory management circuit, coupled to the host interface and the memory interface;
• and
• a first temporary memory, coupled to the memory management circuit, comprising a temporary write data storage area,
• wherein the memory management circuit is configured to receive at least one write data corresponding to at least one write command from the host system and to temporarily store the at least one write data into the temporary write data storage area,
• wherein the memory management circuit is further configured to write the at least one write data into the rewritable non-volatile memory module from the temporary write data storage area according to the at least one write command,
• wherein the memory management circuit is further configured to copy the at least one write data into the second temporary memory from the temporary write data storage area, wherein a transmission bandwidth of the first temporary memory is larger than a transmission bandwidth of the second temporary memory,
• wherein the memory management circuit is further configured to determine whether a program fail is occurred after writing the at least one write data into the rewritable non-volatile memory module,
• wherein when the program fail is occurred, the memory controller is configured to read the at least one write data from the second temporary memory and to write the at least one write data into the rewritable non-volatile memory module according to the at least one write command.