Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
AssigneeEKC Technology, Inc.
InventorHua Cui
Life of this patent
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Abstract
A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, at least one halide anion selected from Cl− or Br−, and, where the metal hard mask comprises only TiN or TiNxOy, optionally at least one hydroxide source.
Claims11
A semiconductor processing composition which is effective for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate in the absence of a Cu corrosion inhibitor, wherein the substrate includes copper, low-k dielectric material and a hardmask selected from TiN or TiNxOy, the composition comprising water, at least one halide anion selected from Cl− or Br−, at least one oxidizing agent.
A semiconductor processing composition which is effective for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate in the absence of a Cu corrosion inhibitor, wherein the substrate includes copper, low-k dielectric material and a metal hardmask which is W, the composition comprising water, at least one halide anion selected from Cl− or Br−, and at least one oxidizing agent.
A method for simultaneously removing polymeric materials and etch residues and selectively etching TiN or TiNxOy from a semiconductor device comprising Cu, low-k dielectric material and TiN or TiNxOy which comprises:
- contacting the semiconductor device with an aqueous composition comprising at least one halide anion selected from Cl− or Br−, and at least one oxidizing agent in the absence of a Cu corrosion inhibitor and wherein the composition is effective in removing polymeric materials and etch residues and selectively etching TiN or TiNxOy from a semiconductor device comprising Cu, low-k dielectric material and TiN or TiNxOy.
Dependencies are inferred from the claim text.