Plasma etching method
AssigneeHitachi High-Technologies Corporation
InventorsTomoyuki WATANABE, Michikazu MORIMOTO, Mamoru YAKUSHIJI, Tetsuo ONO
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Abstract
A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film.
Claims11
A plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, wherein plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film.
A plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, wherein plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing Si—O bonding.
Dependencies are inferred from the claim text.