Semiconductor Processing System with Source for Decoupled Ion and Radical Control

A plasma generation and axial exhaust assembly, comprising:

• an upper support plate;
• a number of support structures affixed to the upper support plate so as to extend in a substantially perpendicular direction away from the upper support plate;
• a central cylindrically-shaped plasma generation microchamber affixed to a first portion of the number of support structures at a location substantially centered upon the upper support plate;
• and
• a plurality of annular-shaped plasma generation microchambers affixed to corresponding portions of the number of support structures, the plurality of annular-shaped plasma generation microchambers positioned in a concentric manner about the central cylindrically-shaped plasma generation microchamber,
• wherein adjacently positioned ones of the central cylindrically-shaped plasma generation microchamber and the plurality of annular-shaped plasma generation microchambers are spaced apart from each other so as to form a number of axial exhaust vents therebetween, wherein each axial exhaust vent is fluidly connected to a fluid flow region between the number of support structures and between the upper support plate and each of the plurality of annular-shaped plasma generation microchambers, wherein the fluid flow region is fluidly connected to a peripheral exhaust vent formed at a periphery of the upper support plate between the upper support plate and an outermost one of the plurality of annular-shaped plasma generation microchambers.

A semiconductor substrate processing system, comprising:

• a substrate support defined to support a substrate in exposure to a processing region;
• and
• a top plate assembly positioned above and spaced apart from the substrate support, such that the processing region exists between the top plate assembly and the substrate support, the top plate assembly including a central plasma generation microchamber at a location substantially centered on the top plate assembly, the top plate assembly also including a plurality of annular-shaped plasma generation microchambers positioned in a concentric manner about the central plasma generation microchamber,
• wherein adjacently positioned ones of the central plasma generation microchamber and the plurality of annular-shaped plasma generation microchambers are spaced apart from each other so as to form a number of axial exhaust vents therebetween, and
• wherein each of the central plasma generation microchamber and the plurality of annular-shaped plasma generation microchambers is defined to generate a corresponding plasma therein and supply reactive constituents of its plasma to the processing region between the top plate assembly and the substrate support.

A method for processing a semiconductor substrate, comprising:

• placing a substrate on a substrate support in exposure to a substrate processing region;
• supplying one or more process gases and radiofrequency power to each of a central plasma generation microchamber and a plurality of annular-shaped plasma generation microchambers positioned above the substrate support in exposure to the substrate processing region, whereby the radiofrequency power transforms the one or more process gases into a plasma in each of the central plasma generation microchamber and the plurality of annular-shaped plasma generation microchambers;
• flowing reactive constituents of the plasma from each of the central plasma generation microchamber and the plurality of annular-shaped plasma generation microchambers into the substrate processing region so as to expose the substrate to the reactive constituents;
• and
• removing process gases from the substrate processing region through axial exhaust vents located between adjacently positioned ones of the central plasma generation microchamber and the plurality of annular-shaped plasma generation microchambers.