US 2013/0157467 A1 · METHOD FOR FORMING SEMICONDUCTOR DEVICE

Abstract

A method of patterning a material layer of a semiconductor device is disclosed, the method including treating a material layer above a semiconductor substrate with plasma oxygen; depositing a layer of photoresist over a first surface of the material layer after the treating of the material layer; patterning the layer of photoresist, thereby forming a patterned photoresist, exposing portions of the material layer; etching the exposed portions of at least the material layer to form at least one contact via in the material layer extending to a source or drain region of a device at a surface of the substrate; and removing the patterned photoresist from the first surface of the material layer.

Claims20

Dependent claims

A method comprising:

(a) treating a material layer above a semiconductor substrate with plasma oxygen;
(b) depositing a layer of photoresist over a first surface of the material layer after the treating of the material layer;
(c) patterning the layer of photoresist, thereby forming a patterned photoresist and exposing portions of the material layer;
(d) etching the exposed portions of at least the material layer to form at least one contact via in the material layer extending to a source or drain region or gate electrode of a device at a surface of the substrate;
and
(e) removing the patterned photoresist from the first surface of the material layer.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/327,947Filed 16 Dec 2011

Published

20 Jun 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10W 20/081
Of dielectric parts thereof: by forming openings in the dielectric parts
H10P 50/73
Etching of wafers, substrates or parts of devices: using masks for insulating materials
H10P 76/20
Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography: of masks comprising organic materials
H10P 95/00
Generic processes or apparatus for manufacture or treatments not covered by the

Method for forming semiconductor device

Life of this patent

Method for forming semiconductor device

Life of this patent

Abstract

Claims20