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US 2013/0157458 A1Published application
Semiconductor device having a copper plug
AssigneeInternational Business Machines Corporation
InventorsMukta G. Farooq, Emily R. Kinser, Ian D. Melville, Krystyna Waleria Semkow
Life of this patent
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Abstract
Disclosed is a process of making a semiconductor device wherein an insulation layer has a copper plug in contact with the last wiring layer of the device. There may also be a barrier layer separating the copper plug from the insulation layer. There may also be a cap layer over the copper plug to protect it from oxidation. There may also be a dielectric layer over the cap layer.
Claims15
A method of forming a semiconductor device comprising:
- obtaining a semiconductor substrate having a plurality of wiring layers wherein the last wiring layer comprises a conductive material;
- forming an insulation layer on the last wiring layer, forming a via opening in the insulation layer to expose the conductive material in the last wiring layer;
- forming a barrier layer in the via opening;
- forming a copper plug on the barrier layer and filling the via opening;
- and
- forming a cap layer over the insulation layer and the copper plug to prevent oxidation of the copper in the copper plug.
3 more elements
A method of forming a semiconductor device comprising:
- forming an insulation layer on a last wiring layer of a semiconductor device;
- forming a via opening in the insulation layer to expose a conductive material in the last wiring layer;
- and
- forming a copper plug in, and filling, the via opening;
- and
- forming a cap layer over the insulation layer and the copper plug to prevent oxidation of the copper in the copper plug.
3 more elements
Dependencies are inferred from the claim text.