Methods of Forming Metal Silicide Regions on Semiconductor Devices

A method, comprising:

• forming a plurality of sacrificial gate structures above a semiconducting substrate;
• forming a sidewall spacer proximate each of said sacrificial gate structures;
• forming a protective gate cap layer above each of said sacrificial gate structures;
• performing a selective metal silicide formation process to form a metal silicide region in a source/drain region formed in or above said substrate between said sacrificial gate structures and to form a metal layer on at least said sidewall spacer;
• after performing said selective metal silicide formation process, performing a metal deposition process to form a metal layer above said metal silicide region at least between said sidewall spacers on said sacrificial gate structures;
• and
• performing a planarization process on at least said metal layer to define a contact structure positioned above said metal silicide region between said sidewall spacers on said sacrificial gate structures.

A method, comprising:

• forming a sacrificial gate structure above a semiconducting substrate;
• removing said sacrificial gate structure to define a gate opening;
• forming a replacement gate structure in said gate opening, said replacement gate structure comprised of at least one metal layer;
• and
• performing a selective metal silicide formation process to form metal silicide regions in source/drain regions formed in or above said substrate.

A method, comprising:

• forming a plurality of replacement gate structures above a semiconducting substrate;
• forming a plurality of source/drain regions in or above said substrate proximate each of said replacement gate structures;
• forming a layer of insulating material above said substrate between said replacement gate structures,
• forming a protective cap layer above said replacement gate structures and said layer of insulating material;
• forming an contact opening in at least said protective cap layer and said layer of insulating material, said contact opening exposing at least a portion of one of said source/drain regions;
• and
• performing a selective metal silicide formation process through said contact opening to form a metal silicide region in said exposed portion of said source/drain region.