Single crystal silicon tfts made by lateral crystallization from a nanowire seed

A method, comprising:

• depositing a thin film of a first semiconductor material on a sample;
• depositing a thin metal film on the sample;
• establishing a metal island on the sample by patterning the thin metal film;
• annealing the sample to de-wet the metal island and form a metal droplet from the metal island;
• growing a nanowire on the substrate using the metal droplet as a catalyst, wherein the nanowire comprises a second semiconductor material;
• annealing the sample to allow for lateral crystallization to form a crystal grain;
• patterning the crystal grain to establish a crystal island;
• and
• processing an electronic device using the crystal island.

A method, comprising:

• depositing a thin metal film on a substrate of a sample;
• establishing a metal island on the substrate by patterning the thin metal film on the substrate;
• annealing the sample to de-wet the metal island and form a metal droplet from the metal island;
• growing a nanowire on the substrate using the metal droplet as a catalyst, wherein the nanowire comprise a first semiconductor material;
• depositing a thin film of a second semiconductor material on the sample;
• patterning the thin film of the second semiconductor material to establish a crystal island;
• annealing the sample to allow for lateral crystallization to form the crystal island as a crystal grain;
• and
• processing an electronic device using the crystal island.