POLYCRYSTALLINE ALUMINUM NITRIDE BASE MATERIAL FOR CRYSTAL GROWTH OF GaN-BASE SEMICONDUCTOR AND METHOD FOR MANUFACTURING GaN-BASE SEMICONDUCTOR USING THE SAME
OwnerKimiya Miyashita, Michiyasu Komatsu +2inventors
InventorsKimiya Miyashita, Michiyasu Komatsu, Katsuyuki Aoki, Kai Funaki
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Abstract
There is provided a polycrystalline aluminum nitride base material having a linear expansion coefficient similar to GaN. The polycrystalline aluminum nitride base material as a substrate material for crystal growth of GaN-base semiconductors has a mean linear expansion coefficient of 4.9×10−6/K to 6.1×10−6/K between 20° C. and 600° C. and 5.5×10−6/K to 6.6×10−6/K between 20° C. and 1100° C.
Claims11
A polycrystalline aluminium nitride base material for use as a substrate material for crystal growth of GaN-base semiconductors, the polycrystalline aluminium nitride base material having a mean linear expansion coefficient of 4.9×10−6/K to 6.1×10−6/K between 20° C. and 600° C. and 5.5×10−6/K to 6.6×10−6/K between 20° C. and 1100° C.
Dependencies are inferred from the claim text.