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US 2013/0157442 A1Published application
Defect reduction in seeded aluminum nitride crystal growth
AssigneeCrystal IS, Inc.
InventorsRobert T. Bondokov, Kenneth E. Morgan, Leo Schowalter, Glen A. Slack
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Abstract
Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
Claims30
-17. (canceled)
A method for growing single-crystal aluminum nitride (AlN), the method comprising:
- providing a holder sized and shaped to receive an AlN seed, the holder comprising a substantially impervious backing plate;
- disposing an AlN seed and a foil on the backing plate with the foil between the AlN seed and the backing plate;
- and
- depositing aluminum and nitrogen onto the AlN seed under conditions suitable for growing single-crystal AlN originating at the AlN seed.
1 more element
Dependencies are inferred from the claim text.