Forming through substrate vias
AssigneeSematech, Inc.
InventorKlaus HUMMLER
Life of this patent
Estimating the term…
Abstract
A method is provided for establishing through substrate vias (TSVs) within a substrate. The method includes: forming at least one recess in a front-side of a wafer; filling, at least partially, the at least one recess with a sacrificial material from the front-side of the wafer; thinning the wafer from a back-side to reveal the at least one recess at least partially filled with the sacrificial material; removing from the back-side of the wafer the sacrificial material from the at least one recess; and filling the at least one recess from the back-side of the wafer with a conductive material to provide the at least one through substrate via.
Claims20
A method comprising:
- providing at least one through substrate via (TSV) through a substrate, the providing comprising:
- forming at least one recess in a first side of a wafer;
- filling, at least partially, the at least one recess with a sacrificial material;
- thinning the wafer from a second side to reveal the at least one recess at least partially filled with the sacrificial material;
- removing, from the second side of the wafer, the sacrificial material from the at least one recess;
- and
- filling the at least one recess from the second side of the wafer with a conductive material to provide the at least one through substrate via.
A method of forming a structure comprising:
- forming at least one recess in a front-side of a wafer;
- filling, at least partially, the at least one recess with a sacrificial material;
- forming one or more devices at the front-side of the wafer;
- thinning the wafer from a back-side to reveal the at least one recess at least partially filled with the sacrificial material, the thinning being subsequent to the forming of the one or more devices at the front-side of the wafer;
- removing, from the back-side of the wafer, the sacrificial material from the at least one recess;
- and
- filling the at least one recess from the back-side of the wafer with a conductive material to provide at least one through substrate via (TSV) through the wafer.
Dependencies are inferred from the claim text.