Back to results
US 2013/0157434 A1Published application
Phase change memory apparatus and fabrication method thereof
AssigneeSK hynix Inc.
InventorJang Uk LEE
Life of this patent
Estimating the term…
Abstract
A phase change memory apparatus is provided that includes a first electrode of a bar type having a trench formed on an active region of a semiconductor substrate, a second electrode formed in a bottom portion of the trench, and a bottom electrode contact formed on the second electrode.
Claims9
A method of manufacturing a phase change memory apparatus, comprising:
- forming a selective epitaxial growth layer on an active region of a semiconductor substrate;
- forming a trench in the selective epitaxial growth layer;
- forming an electrode having an opposite conductivity to the selective epitaxial growth layer in a portion of the trench;
- and
- forming an electrode contact on the electrode.
2 more elements
Dependencies are inferred from the claim text.