Electrostatic Discharge Protection Device and Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Song Sheu, Jian-Hsing Lee, Yao-Wu Feng
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Abstract
Embodiments of the invention relate to an electrostatic discharge (ESD) device and method for forming an ESD device. An embodiment is an ESD protection device comprising a p well disposed in a substrate, an n well disposed in the substrate, a high voltage n well (HVNW) disposed between the p well and the n well in the substrate, a source n+ region disposed in the p well, and a plurality of drain n+ regions disposed in the n well.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a p well in a semiconductor substrate;
- forming a high voltage n well in the semiconductor substrate;
- forming a deep n well in the high voltage n well;
- and
- forming n+ regions in the deep n well.
A method of forming a semiconductor device, the method comprising:
- forming a drain region, the drain region having dopants of a first conductivity type;
- forming a plurality of highly doped regions in the drain region, the plurality of highly doped regions having a higher concentration of dopants of the first conductivity type than the drain region;
- and
- forming a plurality of contacts, wherein at least two of the plurality of contacts are electrically coupled to different ones of the plurality of highly doped regions.
A method of forming a semiconductor device, the method comprising:
- forming a first doped region in a substrate, the first doped region having a first concentration of dopants of a first conductivity type;
- forming a plurality of second doped regions in the first doped region, the second doped regions having a second concentration of the first conductivity type, the second concentration being greater than the first concentration, the plurality of second doped regions being separated from each other;
- and
- forming one or more contacts over different ones of the plurality of second doped regions.
Dependencies are inferred from the claim text.