Method for producing a conductive nanoparticle memory device

A method for producing a memory device with nanoparticles, comprising at least the steps of:

• a) forming, in a substrate based on at least one semi-conductor, source and drain regions, and at least one first dielectric on at least one zone of the substrate arranged between the source and drain regions, said at least one zone intended to form a channel of the memory device,
• b) depositing of at least one ionic liquid that is an organic salt or mixture of organic salts in a liquid state, wherein nanoparticles of at least one electrically conductive material are suspended in the ionic liquid, said ionic liquid covering at least said first dielectric, and
• c) forming, after step b), a deposition of said nanoparticles at least on said first dielectric,
• d) removing, after step c), the ionic liquid remaining on the first dielectric,
• e) forming, after step d), at least one second dielectric and at least one control gate on at least one part of the nanoparticles deposited on the first dielectric,
• wherein the method further comprises applying a non-zero difference of electric potentials between the substrate and the ionic liquid during at least one part of step c) of the forming the deposition of nanoparticles, and wherein the difference of electric potentials is applied, via the substrate, between at least one of the source and drain region, and the ionic liquid.