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US 2013/0157425 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeSony Corporation
InventorRui MORIMOTO
Life of this patent
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Abstract
A semiconductor device includes: a cooling function component including an active region made of an impurity region and formed on a surface of a semiconductor layer, an N-type gate made of a semiconductor including an N-type impurity, a P-type gate made of a semiconductor including a P-type impurity, a first metal wiring connected to the N-type gate, the P-type gate and the active region, a second metal wiring connected to the P-type gate and the N-type gate, and a heat releasing portion connected to the second metal wiring for releasing heat to the outside.
Claims5
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a semiconductor film to be a gate on a semiconductor layer;
- implanting an N-type impurity into one part of the semiconductor film and implanting a P-type impurity into the other part of the semiconductor film;
- forming an N-type gate and a P-type gate respectively by patterning the semiconductor film;
- forming an active region made of an impurity region on the surface of the semiconductor layer;
- forming a first metal wiring connected to the N-type gate, the P-type gate and the active region and forming a second metal wiring connected to the P-type gate and the N-type gate;
- and
- forming a heat releasing portion connected to the second metal wiring for releasing heat to the outside.
4 more elements
Dependencies are inferred from the claim text.