Methods of forming a semiconductor device

A method of forming a semiconductor device, comprising:

• growing a pad oxide on front and back sides of a device wafer;
• depositing a thin (first) nitride layer over the front and back side pad oxide layers;
• growing a diamond layer on the front side thin nitride layer;
• depositing a second nitride layer on the diamond layer and the back side first nitride layer;
• etching the back side to substantially remove the first and second nitride layers;
• growing
• a thick oxide on the etched back side of the device wafer;
• depositing a polysilicon layer on the front and back side of the device wafer;
• planarizing the polysilicon on the front side of the device wafer;
• and
• attaching the planarized side of the device wafer to a handle wafer to form the semiconductor device.