Double-sided heterojunction solar cell based on thin epitaxial silicon

A method for fabricating a double-sided heterojunction solar cell, comprising:

• depositing a layer of heavily doped crystalline-Si (c-Si) on the surface of a metallurgical-grade silicon (MG-Si) substrate;
• epitaxially forming a layer of lightly doped c-Si on the surface of the heavily doped c-Si layer;
• removing the MG-Si substrate and the heavily doped c-Si layer;
• forming a front-side passivation layer on the front side of the lightly doped c-Si layer;
• forming a back-side passivation layer on the back side of the lightly doped c-Si layer;
• forming a front-side emitter on the front-side passivation layer;
• forming a back surface field (BSF) layer on the back-side passivation layer;
• forming a front-side electrode grid;
• and
• forming a back-side electrode.