Double gate thin-film transistor and oled display apparatus including the same
AssigneeSamsung Display Co., Ltd.
InventorsHye-Hyang Park, Ki-Ju Im, Yong-Sung Park
Life of this patent
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Abstract
A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening.
Claims13
A method of manufacturing an organic light-emitting diode (OLED) display apparatus, the method comprising:
- forming a pixel electrode on a planarization layer and electrically connected to a thin-film transistor (TFT);
- forming a pixel-defining layer (PDL) on the pixel electrode;
- forming a first opening for exposing a portion of the planarization layer corresponding to an active layer of the TFT by etching the PDL and the planarization layer, and a second opening for exposing a portion of the pixel electrode and formed by etching the PDL;
- and
- forming an opposite electrode in the first opening and the second opening.
A method of manufacturing a double gate thin-film transistor (TFT), the method comprising:
- forming a first gate electrode on a substrate;
- forming an active layer on the first gate electrode;
- forming source and drain electrodes on the active layer;
- forming a planarization layer on the source and drain electrodes;
- forming an opening corresponding to the active layer by etching the planarization layer;
- and
- forming a second gate electrode in the opening.
Dependencies are inferred from the claim text.